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MML20211HT1 1 rf device data freescale semiconductor enhancement mode phemt technology (e--phemt) low noise amplifier the mml20211h is a single--stage low noise amplifier (lna) with active bias and high isolation for use in cellular infrastructure applications. it is designed for a range of low noise, high linearity applications such as pico cell, femto cell, tower mounted amplifiers (tma) and receiver front end circuits. it operates from a single voltage supply and is suitable for applications with frequencies from 1400 to 2800 mhz such as td--scdma, w--cdma, umts, pcs, lte and bwa. features ? ultra low noise figure: 0.65 db @ 2140 mhz ? frequency: 1400--2800 mhz ? high reverse isolation: --35 db @ 2140 mhz ? p1db: 21.3 dbm @ 2140 mhz ? small--signal gain: 18.6 db @ 2140 mhz (adjustable externally) ? third order output intercept point: 33 dbm @ 2140 mhz ? active bias control (adjustable externally) ? single 5 v supply ? supply current: 60 ma ? 50 ohm operation (some external matching required) ? cost--effective 8--pin, 2 mm dfn surface mount plastic package ? in tape and reel. t1 suffix = 1,000 units, 12 mm tape width, 7--inch reel. table 1. typical performance (1) characteristic symbol 1400 mhz 1800 mhz 2140 mhz 2700 mhz unit noise figure (2) nf 0.65 0.65 0.65 0.85 db input return loss (s11) irl --19.5 -- 1 6 --16.7 --17.3 db output return loss (s22) orl --24.9 -- 2 8 --26.6 -- 2 0 db small--signal gain (s21) g p 21.3 19.7 18.6 18.1 db power output @ 1db compression p1db 21.1 21.1 21.3 19.6 dbm third order input intercept point iip3 10.8 12.5 14.4 14.9 dbm third order output intercept point oip3 32.1 32.2 33 33 dbm 1. v dd =5vdc,t a =25 ? c, 50 ohm system, application circuit tuned for specified frequency. 2. noise figure value calculated with connector losses removed. table 2. maximum ratings rating symbol value unit supply voltage v dd 6 v supply current i dd 200 ma rf input power p in 22 dbm storage temperature range t stg --65 to +150 ? c junction temperature t j 175 ? c table 3. thermal characteristics characteristic symbol value (3) unit thermal resistance, junction to case case temperature 87 ? c, 5 vdc, i dd = 60 ma, no rf applied r ? jc 43.4 ? c/w 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. freescale semiconductor technical data document number: mml20211h rev. 1, 9/2014 1400--2800 mhz, 18.6 db 21.3 dbm e--phemt lna dfn 2 ? 2 MML20211HT1 ? freescale semiconductor, inc., 2011, 2014. a ll rights reserved.
figure 1. pin connections (top view) rf out rf in 18 27 36 rf out 4 5 rf in rf match v bias n.c. fb gnd 2 rf device data freescale semiconductor MML20211HT1 table 4. electrical characteristics (v dd = 5 vdc, 2140 mhz, t a =25 ? c, 50 ohm system, in freescale application circuit) characteristic symbol min typ max unit small--signal gain (s21) g p 15 18.6 ? db input return loss (s11) irl ? --16.7 ? db output return loss (s22) orl ? --26.6 ? db power output @ 1db compression p1db ? 21.3 ? dbm third order input intercept point iip3 ? 14.4 ? dbm third order output intercept point oip3 ? 33 ? dbm reverse isolation (s12) |s12| ? -- 3 5 ? db noise figure (1) nf ? 0.65 ? db supply current (2) i dd 45 60 85 ma supply voltage v dd ? 5 ? v 1. noise figure value calculated with connector losses removed. 2. dc current measured with no rf signal applied. table 5. functional pin description pin number pin function 1 rf in 2 rf in 3 rf input matching termination 4 bias voltage dc supply 5 rf feedback 6 rf out /dc supply 7 rf out /dc supply 8 no connection table 6. esd protection characteristics test methodology class human body model (per jesd22--a114) 0 machine model (per eia/jesd22--a115) a charge device model (per jesd22--c101) iv table 7. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 1 260 ? c
MML20211HT1 3 rf device data freescale semiconductor 50 ohm application circuit: 2140 mhz figure 2. MML20211HT1 test circuit schematic z1 0.080 ? x 0.021 ? microstrip z2 0.218 ? x 0.021 ? microstrip z3 0.044 ? x0.011 ? microstrip z4 0.020 ? x 0.031 ? microstrip z5 0.038 ? x 0.021 ? microstrip z6 0.021 ? x 0.080 ? microstrip rf input bias circuit c1 c8 l1 v dd rf output 1 2 3 8 6 4 5 c7 r2 c5 c6 r1 l2 n.c. c4 c9 r3 c3 7 z2 z1 z3 z6 z4 z5 c2 table 8. MML20211HT1 test circuit c omponent designations and values part description part number manufacturer c1, c5 18 pf chip capacitors gjm1555c1h180jb01d murata c2, c3, c6, c7 18 pf chip capacitors grm1555c1h180ja01d murata c4, c8 0.1 ? f chip capacitors grm155r61a104ka01d murata c9 0.6 pf chip capacitor gjm1555c1hr60bb01d murata l1, l2 3.6 nh chip inductors 0402hp--3n6xgl coilcraft r1 180 ? , 1/16 w chip resistor rc0402fr--07180rl yageo r2 0 ? , 1 a chip resistor erj2ge0r00x panasonic r3 1.5 k ? , 1/16 w chip resistor rc0402fr--071k5l yageo pcb 0.010 ? , ? r = 3.38, multilayer is680--3.38 isola
4 rf device data freescale semiconductor MML20211HT1 50 ohm application circuit: 2140 mhz note: to achieve optimal noise performance, it is cr itical that proper biasi ng, input matching, supply decoupling and grounding are employed. figure 3. MML20211HT1 test circuit component layout c9 v dd 5v rf in rf out c1 l1 r3 c4 c3 l2 c2 r1 c6 c5 r2 c7 c8 dfn 2x2--8c rev. 0 via a via a table 8. MML20211HT1 test circuit c omponent designations and values part description part number manufacturer c1, c5 18 pf chip capacitors gjm1555c1h180jb01d murata c2, c3, c6, c7 18 pf chip capacitors grm1555c1h180ja01d murata c4, c8 0.1 ? f chip capacitors grm155r61a104ka01d murata c9 0.6 pf chip capacitor gjm1555c1hr60bb01d murata l1, l2 3.6 nh chip inductors 0402hp--3n6xgl coilcraft r1 180 ? , 1/16 w chip resistor rc0402fr--07180rl yageo r2 0 ? , 1 a chip resistor erj2ge0r00x panasonic r3 1.5 k ? , 1/16 w chip resistor rc0402fr--071k5l yageo pcb 0.010 ? , ? r = 3.38, multilayer is680--3.38 isola (test circuit component designations and values repeated for reference.)
MML20211HT1 5 rf device data freescale semiconductor 50 ohm typical characteristics: 2140 mhz figure 4. s11 versus frequency versus temperature 2300 -- 2 4 -- 3 2000 f, frequency (mhz) 2060 -- 6 -- 9 -- 1 2 -- 1 5 -- 1 8 -- 2 1 s11 (db) 2120 2180 2240 figure 5. s12 versus frequency versus temperature 0 35 f, frequency (mhz) 30 25 20 10 5 s12 (db) -- 4 0 ? c 25 ? c 85 ? c 15 v dd =5vdc figure 6. s21 versus frequency versus temperature 15 22 f, frequency (mhz) 21 20 19 17 16 s21 (db) -- 4 0 ? c 25 ? c 85 ? c 18 v dd =5vdc figure 7. s22 versus frequency versus temperature -- 4 0 -- 1 9 f, frequency (mhz) -- 2 2 -- 2 5 -- 2 8 -- 3 1 -- 3 4 -- 3 7 s22 (db) -- 4 0 ? c 25 ? c 85 ? c v dd =5vdc 2300 2000 2060 2120 2180 2240 2300 2000 2060 2120 2180 2240 2300 2000 2060 2120 2180 2240 -- 4 0 -- 2 6 -- 2 8 -- 3 0 -- 3 2 -- 3 4 -- 3 6 -- 3 8 -- 4 0 ? c 25 ? c 85 ? c v dd =5vdc
6 rf device data freescale semiconductor MML20211HT1 50 ohm typical characteristics: 2140 mhz figure 8. noise figure versus frequency versus temperature f, frequency (mhz) 1.4 0.4 0.8 nf, noise figure (db) 1.2 0.6 0.2 1 25 ? c 85 ? c -- 4 0 ? c v dd =5vdc 0 2040 2080 2120 2160 2200 2240 figure 9. power gain versus output power versus temperature, cw p out , output power (dbm) 21 20 19 13 16 16 g ps , power gain (db) 18 14 68 15 12 22 17 10 12 14 20 18 -- 4 0 ? c 85 ? c 25 ? c 22 v dd =5vdc f = 2140 mhz figure 10. third order output intercept point (two--tone) versus i dd current i dd , current (ma) 36 32 20 80 26 24 20 40 18 30 50 60 70 100 90 38 oip3, third order output intercept point (dbm) 34 28 22 figure 11. third order output intercept point (two--tone) versus frequency versus temperature f, frequency (mhz) 36 31 33 oip3, third order output intercept point (dbm) 35 32 30 34 25 ? c -- 4 0 ? c 29 2040 2080 2120 2160 2200 2240 figure 12. p1db versus frequency versus temperature, cw f, frequency (mhz) 23 22 21 18 20 17 19 -- 4 0 ? c 25 ? c 85 ? c 24 p1db, 1 db compression point, cw (dbm) v dd =5vdc 2040 2080 2120 2160 2200 2240 v dd =5vdc 1 mhz tone spacing v dd =5vdc f = 2140 mhz 1 mhz tone spacing 30 85 ? c
MML20211HT1 7 rf device data freescale semiconductor 50 ohm application circuit: 1800 mhz figure 13. MML20211HT1 test circuit schematic z1 0.080 ? x 0.021 ? microstrip z2 0.218 ? x 0.021 ? microstrip z3 0.044 ? x0.011 ? microstrip z4 0.020 ? x 0.031 ? microstrip z5 0.038 ? x 0.021 ? microstrip z6 0.021 ? x 0.080 ? microstrip rf input bias circuit c1 c8 l1 v dd rf output 1 2 3 8 6 4 5 c7 r2 c5 c6 r1 l2 n.c. c4 c9 r3 c3 7 z2 z1 z3 z6 z4 z5 c2 table 9. MML20211HT1 test circuit c omponent designations and values part description part number manufacturer c1, c5 18 pf chip capacitors gjm1555c1h180jb01d murata c2, c3, c6, c7 18 pf chip capacitors grm1555c1h180ja01d murata c4, c8 0.1 ? f chip capacitors grm155r61a104ka01d murata c9 0.7 pf chip capacitor gjm1555c1hr70bb01d murata l1 3.6 nh chip inductor 0402hp--3n6xgl coilcraft l2 4.7 nh chip inductor 0402cs--4n7 coilcraft r1 180 ? , 1/16 w chip resistor rc0402fr--07180rl yageo r2 0 ? , 1 a chip resistor erj2ge0r00x panasonic r3 1.5 k ? , 1/16 w chip resistor rc0402fr--071k5l yageo pcb 0.010 ? , ? r = 3.38, multilayer is680--3.38 isola
8 rf device data freescale semiconductor MML20211HT1 50 ohm application circuit: 1800 mhz note: to achieve optimal noise performance, it is cr itical that proper biasi ng, input matching, supply decoupling and grounding are employed. figure 14. MML20211HT1 test circuit component layout c9 v dd 5v rf in rf out c1 l1 r3 c4 c3 l2 c2 r1 c6 c5 r2 c7 c8 dfn 2x2--8c rev. 0 via a via a table 9. MML20211HT1 test circuit c omponent designations and values part description part number manufacturer c1, c5 18 pf chip capacitors gjm1555c1h180jb01d murata c2, c3, c6, c7 18 pf chip capacitors grm1555c1h180ja01d murata c4, c8 0.1 ? f chip capacitors grm155r61a104ka01d murata c9 0.7 pf chip capacitor gjm1555c1hr70bb01d murata l1 3.6 nh chip inductor 0402hp--3n6xgl coilcraft l2 4.7 nh chip inductor 0402cs--4n7 coilcraft r1 180 ? , 1/16 w chip resistor rc0402fr--07180rl yageo r2 0 ? , 1 a chip resistor erj2ge0r00x panasonic r3 1.5 k ? , 1/16 w chip resistor rc0402fr--071k5l yageo pcb 0.010 ? , ? r = 3.38, multilayer is680--3.38 isola (test circuit component designations and values repeated for reference.)
MML20211HT1 9 rf device data freescale semiconductor 50 ohm typical characteristics: 1800 mhz 1950 1650 1710 1770 1830 1890 1950 1650 1710 1770 1830 1890 figure 15. s11 versus frequency 1950 -- 2 4 -- 3 1650 f, frequency (mhz) 1710 -- 6 -- 9 -- 1 2 -- 1 5 -- 1 8 -- 2 1 s11 (db) 1770 1830 1890 v dd =5vdc figure 16. s12 versus frequency 0 35 f, frequency (mhz) 30 25 20 10 5 s12 (db) 15 v dd =5vdc figure 17. s21 versus frequency 15 22 f, frequency (mhz) 21 20 19 17 16 s21 (db) 18 v dd =5vdc figure 18. s22 versus frequency -- 3 7 -- 1 6 f, frequency (mhz) -- 1 9 -- 2 2 -- 2 5 -- 2 8 -- 3 1 -- 3 4 s22 (db) v dd =5vdc 1950 1650 1710 1770 1830 1890 -- 4 0 -- 2 6 -- 2 8 -- 3 0 -- 3 2 -- 3 4 -- 3 6 -- 3 8
10 rf device data freescale semiconductor MML20211HT1 50 ohm typical characteristics: 1800 mhz 1700 1740 1780 1820 1860 1900 figure 19. noise figure versus frequency f, frequency (mhz) 1.4 0.4 0.8 nf, noise figure (db) 1.2 1700 0.6 0.2 1 v dd =5vdc 0 1740 1780 1820 1860 1900 figure 20. third order output intercept point (two--tone) versus frequency f, frequency (mhz) 36 31 33 oip3, third order output intercept point (dbm) 35 32 30 34 29 v dd =5vdc 1 mhz tone spacing
MML20211HT1 11 rf device data freescale semiconductor 50 ohm application circuit: 2700 mhz v dd rf output l2 c4 c3 z5 z3 z4 c2 rf input figure 21. MML20211HT1 test circuit schematic bias circuit c1 c8 l1 1 2 3 8 6 4 5 c7 r2 c5 n.c. c9 r3 7 z1 0.150 ? x 0.021 ? microstrip z2 0.044 ? x0.011 ? microstrip z3 0.020 ? x 0.031 ? microstrip z4 0.038 ? x 0.021 ? microstrip z5 0.021 ? x 0.080 ? microstrip z1 z2 n.c. table 10. MML20211HT1 test circuit c omponent designations and values part description part number manufacturer c1, c5 8.2 pf chip capacitors gjm1555c1h8r2cb01 murata c2, c3, c7 8.2 pf chip capacitors grm1555c1h8r2da01 murata c4, c8 0.1 ? f chip capacitors grm155r61a104ka01d murata c6 component not placed c9 0.8 pf chip capacitor gjm1555c1hr80bb01d murata l1, l2 2.2 nh chip inductors 0402cs--2n2 coilcraft r1 component not placed r2 0 ? , 1 a chip resistor erj2ge0r00x panasonic r3 1.5 k ? , 1/16 w chip resistor rc0402fr--071k5l yageo pcb 0.010 ? , ? r = 3.38, multilayer is680--3.38 isola note: component numbers c6 and r1 are labeled on board but not placed.
12 rf device data freescale semiconductor MML20211HT1 50 ohm application circuit: 2700 mhz note: to achieve optimal noise performance, it is cr itical that proper biasi ng, input matching, supply decoupling and grounding are employed. figure 22. MML20211HT1 test circuit component layout c9 v dd 5v rf in rf out c1 l1 r3 c4 c3 l2 c2 r1* c6* c5 r2 c7 c8 dfn 2x2--8c rev. 0 via a via a note: component numbers c6* and r1* are labeled on board but not placed. table 10. MML20211HT1 test circuit c omponent designations and values part description part number manufacturer c1, c5 8.2 pf chip capacitors gjm1555c1h8r2cb01 murata c2, c3, c7 8.2 pf chip capacitors grm1555c1h8r2da01 murata c4, c8 0.1 ? f chip capacitors grm155r61a104ka01d murata c6 component not placed c9 0.8 pf chip capacitor gjm1555c1hr80bb01d murata l1, l2 2.2 nh chip inductors 0402cs--2n2 coilcraft r1 component not placed r2 0 ? , 1 a chip resistor erj2ge0r00x panasonic r3 1.5 k ? , 1/16 w chip resistor rc0402fr--071k5l yageo pcb 0.010 ? , ? r = 3.38, multilayer is680--3.38 isola (test circuit component designations and values repeated for reference.)
MML20211HT1 13 rf device data freescale semiconductor 50 ohm typical characteristics: 2700 mhz 2850 2550 2610 2670 2730 2790 2850 2550 2610 2670 2730 2790 2850 2550 2610 2670 2730 2790 figure 23. s11 versus frequency 2850 -- 2 4 -- 3 2550 f, frequency (mhz) 2610 -- 6 -- 9 -- 1 2 -- 1 5 -- 1 8 -- 2 1 s11 (db) 2670 2730 2790 v dd =5vdc figure 24. s12 versus frequency 0 35 f, frequency (mhz) 30 25 20 10 5 s12 (db) 15 v dd =5vdc figure 25. s21 versus frequency 14 21 f, frequency (mhz) 20 19 18 16 15 s21 (db) 17 v dd =5vdc figure 26. s22 versus frequency -- 3 4 13 f, frequency (mhz) -- 1 6 -- 1 9 -- 2 2 -- 2 5 -- 2 8 -- 3 1 s22 (db) v dd =5vdc -- 4 0 -- 2 6 -- 2 8 -- 3 0 -- 3 2 -- 3 4 -- 3 6 -- 3 8
14 rf device data freescale semiconductor MML20211HT1 50 ohm typical characteristics: 2700 mhz 2600 2640 2680 2720 2760 2800 figure 27. noise figure versus frequency f, frequency (mhz) 1.4 0.4 0.8 nf, noise figure (db) 1.2 2600 0.6 0.2 1 v dd =5vdc 0 2640 2680 2720 2760 2800 figure 28. third order output intercept point (two--tone) versus frequency f, frequency (mhz) 36 31 33 oip3, third order output intercept point (dbm) 35 32 30 34 29 v dd =5vdc 1 mhz tone spacing
MML20211HT1 15 rf device data freescale semiconductor 0.30 0.50 2.40 1.20 0.60 2.00 0.80 figure 29. pcb pad layout for dfn 2 ? 2 1.6 ? 0.8 solder pad with thermal via structure. all dimensions in mm. figure 30. product marking mb yw
16 rf device data freescale semiconductor MML20211HT1 package dimensions
MML20211HT1 17 rf device data freescale semiconductor
18 rf device data freescale semiconductor MML20211HT1
MML20211HT1 19 rf device data freescale semiconductor product documentation, tools and software refer to the following resources to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers software ? .s2p file development tools ? printed circuit boards for software and tools, do a part number search at http://www .freescale.com, and select th e ?part number? link. go to software & tools on the part?s product summary page to download the respective tool. failure analysis at this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. in cases where freescale is contractually obligated to perform failure analysis (fa) services, full fa may be performed by third party vendors with moderate success. for updates c ontact your local freescale sales office. revision history the following table summarizes revisions to this document. revision date description 0 aug. 2011 ? initial release of data sheet 1 sept. 2014 ? table 2, maximum ratings: updated junction temperature from 150 ? c to 175 ? c to reflect recent test results of the device, p. 1 ? table 6, esd protection characte ristics: removed the word ?minimum? after the esd class rating. esd ratings are characterized during new product dev elopment but are not 100% tested during production. esd ratings provided in the data sheet are intended to be used as a guideline when handling esd sensitive devices, p. 2 ? revised failure analysis information, p. 19
20 rf device data freescale semiconductor MML20211HT1 information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. freescale and the freescale logo are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. all other product or service names are the property of their respective owners. e 2011, 2014 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: mml20211h rev. 1, 9/2014

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